3D AFM image of Si0.74Ge0.26 layer on Si
Figures 1 and 2 are AFM images taken for Si 0.74
Ge 0.26 layer on Si grown using a gas-source molecular
beam epitaxy (GSMBE).
AFM images shown in Fig. 7 indicate that the roughness
increases through nonuniform oxidation along the cross-hatch
period, as shown in Fig. 2 .
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