Fabrication processes of a complicated channel system integrated with miniaturized pressure, miniaturized temperature sensors and heaters. a Deposition of a 0.1 μm thick LPCVD nitride is followed by deposition of a 0.3 μm thick LPCVD poly-silicon layer which is patterned into temperature sensors. b After deposition of a 0.3 μm thick LPCVD TEOS layer as insulation, a 0.3 μm thick LPCVD polysilicon layer is deposited and patterned into heater and pressure sensors. A 0.3 μm thick LPCVD TEOS layer is deposited as insulation with contact holes opening for metallization. c A desired thickness of SU-8 layer is spin coated on the substrate as a pressure diaphragm. d A 50 μm thick SU-8 layer is spin coated and made into the cavities which are enclosed by a flexible PET plate, and then bonded with Pyrex glass with epoxy resin. e Remove the silicon substrate in order to move the sensor devices onto Pyrex glass substrate. f Another SU-8 layer is spin coated on the epoxy-glass substrate at desired thickness and patterned as a rectangular micro-channel. After a flexible PET plate is used to enclose the channel, a PMMA plate is then bonded
After annealing at 950°C for 30 min, doped film is patterned
as temperature sensors, as shown in Fig. 6a. .
The Cr/Au metal was deposited by E-Beam with a thickness of
0.03/0.3 μm, respectively, and patterned into circuits, as
shown in Fig. 6b..
This is done first by bonding the silicon wafer with the Pyrex
glass, as shown in Fig. 6b, using epoxy resin as the bonding
Then a PMMA plate is bonded, using epoxy resin, with the
epoxy-glass substrate to re-enforce the channel, as shown in
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