Energy ranges in the silicon band-gap of a p-type substrate over which the density of interface traps can be determined using various measurement methods and characterization techniques. (After [20.3], p. 104)
Viewing this image requires a subscription. If you are a subscriber, please log in.
This image is from the chapter titled "Electrical Characterization of Semiconductor Materials and Devices"
(from Springer Handbook of Electronic and Photonic Materials), which is copyrighted by Springer-Verlag. For more information on the
copyright for this image, please refer to the full image caption and to the
The image is being made available for non-commercial purposes for subscribers to SpringerImages. For more information on what you are allowed to do with this image, please see our copyright policy.
To request permissions to use any copyrighted material, please visit the source document.
Report a copyright concern regarding this image.
Log in or register to save your favorite images and download them as high-quality PowerPoint or PDF files.
Log in or register to save your search criteria.
© Springer, part of Springer Science+Business Media.
Remote Address: 126.96.36.199 Server: 20